Patent attributes
A solid-state image sensor including a plurality of pixels formed on a semiconductor substrate, each pixel comprising a photoelectric conversion element including a charge accumulation region of a first conductivity type, a floating diffusion of the first conductivity type, and a transfer transistor which transfers charge in the charge accumulation region to the floating diffusion, comprises an element isolation region made of an insulator and arranged to isolate adjacent pixels from each other, and an impurity diffusion region of a second conductivity type arranged inside the semiconductor substrate to isolate adjacent pixels from each other, wherein a peak position of an impurity concentration of the impurity diffusion region of one pixel is disposed within a width of the floating diffusion, of the one pixel, along a straight line passing through the photoelectric conversion element, a gate electrode of the transfer transistor, and the floating diffusion which are of the one pixel.