Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Norihito Sone0
Tatsuya Honda0
Kengo Akimoto0
Date of Patent
March 11, 2014
0Patent Application Number
121843880
Date Filed
August 1, 2008
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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