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US Patent 8686516 Silicide formation and associated devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 17, 2013
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Date of Patent
April 1, 2014
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
13919459
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Patent Citations Received
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US Patent 12087861 FinFETs and methods of forming FinFETs
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US Patent 11996453 Introducing fluorine to gate after work function metal deposition
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US Patent 12009399 Semiconductor device suppressing rounded shapes of source/drain contact layers
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US Patent 12062692 Tapered dielectric layer for preventing electrical shorting between gate and back side via
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US Patent 12068191 Low-resistance contact plugs and method forming same
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US Patent 11682710 Structure and formation method of semiconductor device structure with gate structure
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
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US Patent 11764220 Method of manufacturing a semiconductor device by patterning a serpentine cut pattern
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US Patent 11764286 Reducing parasitic capacitance for gate-all-around device by forming extra inner spacers
•••
Patent Inventor Names
Chih-Hao Chang
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Chih-Hao Yu
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Hung-Ming Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
8686516
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Patent Primary Examiner
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Chandra Chaudhari
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