Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 22, 2014
Patent Application Number
13599393
Date Filed
August 30, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET device is fabricated by first receiving a FinFET precursor. The FinFET precursor includes a substrate and fin structures on the substrate. A sidewall spacer is formed along sidewall of fin structures in the precursor. A portion of fin structure is recessed to form a recessing trench with the sidewall spacer as its upper portion. A semiconductor is epitaxially grown in the recessing trench and continually grown above the recessing trench to form an epitaxial structure.
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