US Patent 8703623 Fabrication technique for gallium nitride substrates

A semiconductor arrangement is provided that includes one or more substrate structures. One or more nitride-based material structures are used in fabricating nitride-based devices. One or more intermediary layers are interposed between the one or more substrate structures and the one or more nitride-based material structures. The one or more intermediary layers support the lattice mismatch and thermal expansion coefficients between the one or more nitride-based material structure and the one or more substrate structures. Several new electronic devices based on this arrangement are described.