Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 13, 2014
Patent Application Number
13328015
Date Filed
December 16, 2011
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a FINFET device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the FINFET device on the same SOI substrate.
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