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US Patent 8728956 Plasma activated conformal film deposition
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Patent
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Date Filed
April 11, 2011
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Date of Patent
May 20, 2014
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Patent Application Number
13084399
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Patent Citations Received
US Patent 12087573 Modulation of oxidation profile for substrate processing
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US Patent 11784043 Formation of SiN thin films
US Patent 11851760 PECVD deposition system for deposition on selective side of the substrate
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US Patent 11946142 Spatially tunable deposition to compensate within wafer differential bow
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US Patent 12080592 Film stack simplification for high aspect ratio patterning and vertical scaling
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US Patent 12077859 Variable cycle and time RF activation method for film thickness matching in a multi-station deposition system
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Patent Inventor Names
Bart J. van Schravendijk
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Dennis M. Hausmann
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Easwar Srinivasan
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Hu Kang
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Jon Henri
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Mandyam Sriram
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Ming Li
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Ramesh Chandrasekharan
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Shankar Swaminathan
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Thomas Jewell
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•••
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8728956
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Patent Primary Examiner
David Hung Vu
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