US Patent 8729592 Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.