Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Taichi Nishio0
Date of Patent
May 20, 2014
0Patent Application Number
135621190
Date Filed
July 30, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through-hole; a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film. A gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface.
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