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US Patent 8735993 FinFET body contact and method of making same
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Patent
Date Filed
January 31, 2012
Date of Patent
May 27, 2014
Patent Application Number
13363026
Patent Citations Received
US Patent 12087861 FinFETs and methods of forming FinFETs
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US Patent 11935787 Semiconductor device and a method for fabricating the same
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US Patent 11996453 Introducing fluorine to gate after work function metal deposition
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US Patent 12009399 Semiconductor device suppressing rounded shapes of source/drain contact layers
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US Patent 12062692 Tapered dielectric layer for preventing electrical shorting between gate and back side via
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US Patent 12068191 Low-resistance contact plugs and method forming same
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US Patent 11658177 Semiconductor device structures with a substrate biasing scheme
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US Patent 11682710 Structure and formation method of semiconductor device structure with gate structure
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
•••
Patent Inventor Names
Ching-Hsiung Lo
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Jam-Wem Lee
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Jen-Chou Tseng
0
Wun-Jie Lin
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8735993
Patent Primary Examiner
Matthew W Such
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