US Patent 8742511 Double gate planar field effect transistors
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Patent abstract
A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material.
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Patent Inventor Names
Chung-Hsun Lin0
Jeffrey W. Sleight0
Josephine B. Chang0
Leland Chang0
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US Patent 08742511 Double gate planar field effect transistors US Patent 8742511 Double gate planar field effect transistors
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Patent Number
08742511
Patent Number
8742511
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Official Website
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US Patent 08742511 Double gate planar field effect transistors
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Is a
Patent jurisdiction
Patent number
08742511
Date of patent
June 3, 2014
Patent application number
13944480
Date Filed
July 17, 2013
Patent primary examiner
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