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US Patent 8747680 Method of manufacturing a magnetoresistive-based device

Patent 8747680 was granted and assigned to Everspin Technologies on June, 2014 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Patent Applicant

Everspin Technologies

Current Assignee

Everspin Technologies

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8747680

Patent Inventor Names

Sanjeev Aggarwal0

Sarin A. Deshpande0

Date of Patent

June 10, 2014

Patent Application Number

13830082

Date Filed

March 14, 2013

Patent Citations Received

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US Patent 12112794 Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein

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US Patent 12009228 Low temperature chuck for plasma processing systems

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US Patent 12014770 Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein

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US Patent 12063865 Method of manufacturing integrated circuit using encapsulation during an etch process

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US Patent 11682560 Systems and methods for hafnium-containing film removal

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US Patent 11778919 Magnetoresistive stack/structure and method of manufacturing same

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Patent Primary Examiner

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Roberts Culbert

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