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US Patent 8765563 Trench confined epitaxially grown device layer(s)

Patent 8765563 was granted and assigned to Intel on July, 2014 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

87655630

Patent Inventor Names

Marko Radosavljevic0

Gilbert Dewey0

Han Wui Then0

Jack T. Kavalieros0

Seung Hoon Sung0

Van H. Le0

Willy Rachmady0

Matthew V. Metz0

...

Date of Patent

July 1, 2014

Patent Application Number

136305270

Date Filed

September 28, 2012

Patent Citations Received

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US Patent 11854905 Silicon and silicon germanium nanowire formation

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US Patent 11990530 Replacement-channel fabrication of III-V nanosheet devices

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US Patent 11764266 Three-dimensional semiconductor device

Patent Primary Examiner

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Shaun Campbell

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