US Patent 8785944 High electron mobility transistor

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Is a

Patent

Patent attributes

Patent Applicant

Samsung

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8785944

Patent Inventor Names

Jae-joon Oh0

Jong-bong Ha0

Hyo-ji Choi0

In-jun Hwang0

Jae-won Lee0

Date of Patent

July 22, 2014

Patent Application Number

13707162

Date Filed

December 6, 2012

Patent Citations Received

‌

US Patent 11757005 HEMT-compatible lateral rectifier structure

‌

US Patent 11942518 Reduced interfacial area III-nitride material semiconductor structures

Patent Primary Examiner

‌

Thomas L. Dickey

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