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US Patent 8796093 Doping of FinFET structures

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Is a

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

August 5, 2014

Patent Application Number

13828276

Date Filed

March 14, 2013

Patent Citations Received

US Patent 11948971 Confined source/drain epitaxy regions and method forming same

0

US Patent 11764299 FinFETs having step sided contact plugs and methods of manufacturing the same

US Patent 11843051 Field effect transistor including multiple aspect trapping ratio structures

0

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