US Patent 8809175 Methods of anneal after deposition of gate layers

Patent 8809175 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2014 by the United States Patent and Trademark Office.

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Patent

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Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88091750

Patent Inventor Names

Yu-Lien Huang0

Chun Hsiung Tsai0

Da-Wen Lin0

Xiong-Fei Yu0

Date of Patent

August 19, 2014

Patent Application Number

131839090

Date Filed

July 15, 2011

Patent Citations Received

‌

US Patent 12027427 Preheat processes for millisecond anneal system

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US Patent 12120780 Nitrogen injection for arc lamps

Patent Primary Examiner

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Fernando L Toledo

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