US Patent 8815691 Method of fabricating a gate all around device

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88156910

Patent Inventor Names

Kuo-Cheng Ching0

Zhiqiang Wu0

Jean-Pierre Colinge0

Date of Patent

August 26, 2014

Patent Application Number

137255360

Date Filed

December 21, 2012

Patent Citations Received

‌

US Patent 11996447 Field effect transistors with gate electrode self-aligned to semiconductor fin

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US Patent 11777009 Contacts for highly scaled transistors

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US Patent 11777032 Semiconductor devices and methods of manufacturing the same

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US Patent 11929417 Contacts for highly scaled transistors

Patent Primary Examiner

‌

Andy Huynh

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