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US Patent 8815712 Method for epitaxial re-growth of semiconductor region

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88157120

Patent Inventor Names

Cheng-Hsien Wu0

Clement Hsingjen Wann0

Yi-Jing Lee0

You-Ru Lin0

Cheng-Tien Wan0

Chih-Hsin Ko0

Date of Patent

August 26, 2014

Patent Application Number

134143570

Date Filed

March 7, 2012

Patent Citations Received

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US Patent 12132111 Formation method of semiconductor device structure with gate stacks

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US Patent 11990376 Selective dual silicide formation

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US Patent 11996468 Multi-gate device fabrication and structures thereof

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US Patent 12021142 Method of forming source/drain epitaxial stacks

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US Patent 12022643 Multi-layer high-k gate dielectric structure

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Patent Primary Examiner

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Zandra Smith

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