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US Patent 8822248 Epitaxial growth of crystalline material
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Patent
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Date Filed
January 3, 2012
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Date of Patent
September 2, 2014
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Patent Application Number
13342626
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Patent Citations Received
US Patent 12119367 Composite substrate for fabricating III-V photodetector arrays
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US Patent 11670686 III-N nanostructures formed via cavity fill
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US Patent 11776809 Fabrication of a semiconductor device
US Patent 12077880 In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
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Patent Inventor Names
Ji-Soo Park
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8822248
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Patent Primary Examiner
Tony Tran
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