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US Patent 8826213 Parasitic capacitance extraction for FinFETs

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Ze-Ming Wu0

Hsien-Hsin Sean Lee0

Ke-Ying Su0

Yi-Kan Cheng0

Chia-Ming Ho0

Hsiao-Shu Chao0

Date of Patent

September 2, 2014

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Patent Application Number

138739690

Date Filed

April 30, 2013

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Patent Citations Received

US Patent 12136662 Methods of forming semiconductor devices

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US Patent 12087639 Fin field-effect transistor devices and methods of forming the same

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US Patent 12089390 Cell manufacturing

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US Patent 12094778 Fin field-effect transistor device and method of forming

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US Patent 12094877 Semiconductor device and method

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US Patent 12094948 Forming low-resistance capping layer over metal gate electrode

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US Patent 12119386 Conductive capping for work function layer and method forming same

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US Patent 12125707 Fin field-effect transistor device and method of forming

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