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US Patent 8841702 Enhancement mode III-N HEMTs

Patent 8841702 was granted and assigned to Transphorm Inc. on September, 2014 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Patent Applicant

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88417020

Patent Inventor Names

Umesh Mishra0

Ilan Ben-Yaacov0

Likun Shen0

Primit Parikh0

Robert Coffie0

Date of Patent

September 23, 2014

Patent Application Number

139547720

Date Filed

July 30, 2013

Patent Citations Received

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US Patent 12074150 Module configurations for integrated III-nitride devices

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US Patent 11749656 Module configurations for integrated III-Nitride devices

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US Patent 11973138 N-polar devices including a depleting layer with improved conductivity

Patent Primary Examiner

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Matthew W Such

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