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US Patent 8847315 Complementary metal-oxide-semiconductor (CMOS) device and method
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Patent
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Date Filed
May 7, 2012
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Date of Patent
September 30, 2014
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Patent Application Number
13465064
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Patent Citations Received
US Patent 11894039 FFT-DRAM
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US Patent 11757002 Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation
Patent Inventor Names
Bin Yang
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Jun Yuan
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Xia Li
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8847315
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Patent Primary Examiner
Matthew W Such
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