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US Patent 8847361 Memory cell layout
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Patent
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Date Filed
June 14, 2013
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Date of Patent
September 30, 2014
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Patent Application Number
13918311
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Patent Citations Received
US Patent 11764112 Methods for fabricating FinFETs having different fin numbers and corresponding FinFETs thereof
US Patent 11955486 Integrated circuit device and method of forming the same
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Patent Inventor Names
Chang-Yun Chang
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Jhon-Jhy Liaw
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8847361
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Patent Primary Examiner
Fernando L Toledo
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