US Patent 8890260 Polysilicon design for replacement gate technology

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88902600

Patent Inventor Names

Yu-Ying Hsu0

Kong-Beng Thei0

Lee-Wee Teo0

Sheng-Chen Chung0

Bao-Ru Young0

Chiung-Han Yeh0

Harry Hak-Lay Chuang0

Date of Patent

November 18, 2014

Patent Application Number

125546040

Date Filed

September 4, 2009

Patent Citations Received

‌

US Patent 11764111 Reducing cross-wafer variability for minimum width resistors

Patent Primary Examiner

‌

Jerome Jackson, Jr.

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