US Patent 8900951 Gate-all-around nanowire MOSFET and method of formation

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Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

89009510

Patent Inventor Names

Pouya Hashemi0

Alexander Reznicek0

Ali Khakifirooz0

Bruce B. Doris0

Kangguo Cheng0

Date of Patent

December 2, 2014

Patent Application Number

140350600

Date Filed

September 24, 2013

Patent Citations Received

‌

US Patent 11930696 Fabrication method of a double-gate carbon nanotube transistor

‌

US Patent 11804530 Semiconductor device and method of fabricating the same

Patent Primary Examiner

‌

Cheung Lee

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