US Patent 8929124 Resistive memory device and related method of operation
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Patent abstract
A resistive memory device includes a resistive memory cell, and a read/program circuit configured to program the resistive memory cell from a first state to a second state. The read/program circuit reads a resistance in the first state of the resistive memory cell and adjusts a compliance current supplied to the resistive memory cell according to the read resistance during the program operation.
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Patent Inventor Names
Cheon An Lee0
Dae Han Kim0
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US Patent 08929124 Resistive memory device and related method of operation US Patent 8929124 Resistive memory device and related method of operation
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Patent Number
08929124
Patent Number
8929124
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US Patent 08929124 Resistive memory device and related method of operation
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Patent jurisdiction
Patent number
08929124
Date of patent
January 6, 2015
Patent application number
13765990
Date Filed
February 13, 2013
Patent primary examiner
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