Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 20, 2015
Patent Application Number
13155475
Date Filed
June 8, 2011
Patent Citations Received
Patent Primary Examiner
Patent abstract
An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.
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