Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hariklia Deligianni0
Xiaoyan Shao0
Date of Patent
January 27, 2015
0Patent Application Number
135644140
Date Filed
August 1, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
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