Patent 8946760 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on February, 2015 by the United States Patent and Trademark Office.
A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.