Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomokazu Yokoi0
Yasumasa Yamane0
Date of Patent
February 3, 2015
0Patent Application Number
134887910
Date Filed
June 5, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.
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