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US Patent 8947902 Semiconductor memory and method of making the same

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Jhon Jhy Liaw0

Date of Patent

February 3, 2015

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Patent Application Number

134128040

Date Filed

March 6, 2012

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Patent Citations Received

US Patent 12127387 Gate-all-around high-density and high-speed SRAM cells

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US Patent 11659703 Integrated circuit with embedded high-density and high-current SRAM macros

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US Patent 12022644 Semiconductor structure with a bit line in a different configuration than a local interconnect line

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Patent Primary Examiner

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Patent abstract

A semiconductor memory includes a first bit cell within an integrated circuit (IC), and a second bit cell within the same IC. The first bit cell has a first layout, and the second bit cell has a second layout that differs from the first layout.

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