Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 3, 2015
Patent Application Number
13733936
Date Filed
January 4, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a N-type field effect transistor comprising a N-channel region in a substrate. A high dielectric constant (high-k) layer is disposed on the N-channel region. A diffusion layer including a metal oxide is disposed on the high-k layer. A passivation layer is disposed on the diffusion layer, and a first metal gate is disposed on the passivation layer. The first high-k layer and the N-channel region include metal atoms of a metal element of the metal oxide.
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