Patent attributes
Method of forming multi-gate finFETs with epitaxially-grown merged source/drains. Embodiments of the invention may include forming a plurality of semiconductor fins joined by a plurality of inter-fin semiconductor regions, depositing a sacrificial gate over a center portion of each of the plurality of fins, forming a first merge layer over a first end of each of the plurality of fins to form a first merged fin region, forming a second merge layer over the second end of each of the plurality of fins to form a second merged fin region, etching a portion of the first merged fin region to form a first source/drain base region, etching a portion of the second merged fin region to form a second source/drain base region, forming a first source/drain region on the first source/drain base region, and forming a second source/drain region on the second source/drain base region.
