US Patent 8987587 Metal barrier-doped metal contact layer
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Patent abstract
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
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US Patent 08987587 Metal barrier-doped metal contact layer US Patent 8987587 Metal barrier-doped metal contact layer
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Patent Number
0898758700
Patent Number
898758700
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Patent Jurisdiction
Patent Number
089875870
Date of Patent
March 24, 2015
0Patent Application Number
136151280
Date Filed
September 13, 2012
0Official Website
Patent Primary Examiner
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Infobox
Is a
Patent Jurisdiction
Patent Number
089875870
Date of Patent
March 24, 2015
0Patent Application Number
136151280
Date Filed
September 13, 2012
0Official Website
Patent Primary Examiner
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US Patent 08987587 Metal barrier-doped metal contact layer
Infobox
Is a
Patent jurisdiction
Patent number
08987587
Date of patent
March 24, 2015
Patent application number
13615128
Date Filed
September 13, 2012
Patent primary examiner
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