Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Lien Huang0
Yung-Ta Li0
Chi-Kang Liu0
Chi-Wen Liu0
Chun-Hsiang Fan0
Clement Hsingjen Wann0
Ming-Huan Tsai0
Tsu-Hsiu Perng0
Date of Patent
March 24, 2015
0Patent Application Number
137793560
Date Filed
February 27, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.
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