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Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jhon-Jhy Liaw0
Date of Patent
March 24, 2015
Patent Application Number
13349349
Date Filed
January 12, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
Static random access memory (SRAM) cells and SRAM cell arrays are disclosed. In one embodiment, an SRAM cell includes a pull-up transistor. The pull-up transistor includes a Fin field effect transistor (FinFET) that has a fin of semiconductive material. An active region is disposed within the fin. A contact is disposed over the active region of the pull-up transistor. The contact is a slot contact that is disposed in a first direction. The active region of the pull-up transistor is disposed in a second direction. The second direction is non-perpendicular to the first direction.
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