Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideaki Shishido0
Shunpei Yamazaki0
Takayuki Abe0
Date of Patent
April 21, 2015
Patent Application Number
12730288
Date Filed
March 24, 2010
Patent Citations Received
Patent Primary Examiner
Patent abstract
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
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