US Patent 9029226 Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices

The embodiments of mechanisms for doping lightly doped drain (LDD) regions by driving dopants from highly doped source and drain regions by annealing for finFET devices are provided. The mechanisms overcome the limitation by shadowing effects of ion implantation for advanced finFET devices. The highly doped source and drain regions are formed by epitaxial growing one or more doped silicon-containing materials from recesses formed in the fins. The dopants are then driven into the LDD regions by advanced annealing process, which can achieve targeted dopant levels and profiles in the LDD regions.