Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 12, 2015
Patent Application Number
14222010
Date Filed
March 21, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.
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