Patent 9053801 was granted and assigned to Micron Technology on June, 2015 by the United States Patent and Trademark Office.
Memory cells having ferroelectric materials and methods of operating and forming the same are described herein. As an example, a memory cell can include a first electrode and a second electrode, and an ion source and a ferroelectric material formed between the first electrode and the second electrode, where the ferroelectric material serves to stabilize storage of ions transitioned from the ion source.