Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Youichi Kamada0
Kenji Kiuchi0
Date of Patent
June 16, 2015
0Patent Application Number
144707600
Date Filed
August 27, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode.
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