Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Olivier Joubert0
Jason Reid0
Jean Pierre Nozieres0
Jong Shin0
Dafna Beery0
Date of Patent
June 16, 2015
Patent Application Number
14203362
Date Filed
March 10, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.
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