Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Weng Chang0
Chung-Liang Cheng0
Hsien-Ming Lee0
Po-Chin Kuo0
Date of Patent
June 23, 2015
0Patent Application Number
137207320
Date Filed
December 19, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An N work function metal for a gate stack of a field effect transistor (FinFET) and method of forming the same are provided. An embodiment FinFET includes a fin supported by a semiconductor substrate, the fin extending between a source and a drain and having a channel region, and a gate stack formed over the channel region of the fin, the gate stack including an N work function metal layer comprising an oxidation layer on opposing sides of a tantalum aluminide carbide (TaAlC) layer.
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