Patent attributes
A nonvolatile memory device includes an operation control unit, a reference voltage generating unit, and a sensing unit. The operation control unit is configured to select a unit cell from unit cells to perform reading and writing operations. The reference voltage generating unit is configured to voltage-divide a read voltage using series-connected resistors and generate a reference voltage based on the voltage-divided read voltage. The sensing unit is configured to compare a size of a voltage through an e-fuse of the selected unit cell based on the read voltage with the reference voltage, and sense data of the e-fuse of the selected unit cell. The nonvolatile memory device also includes a read current supply unit configured to output the read voltage to the unit cells during a reading operation of the nonvolatile memory device.
