Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 4, 2015
Patent Application Number
13366933
Date Filed
February 6, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
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