Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 11, 2015
0Patent Application Number
143340160
Date Filed
July 17, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
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