US Patent 9105758 Semiconductor device including a capacitor

A semiconductor device is disclosed, which reduces the depth of a metal contact so that an etching margin is increased in forming a contact hole. In addition, the semiconductor device and the method for forming the same increase a contact area between a plate electrode and a metal contact so that a power source can be more easily provided to the plate electrode. Thus, a sensing noise is reduced and a process margin is improved, resulting in improvement of device operation characteristics.