Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 18, 2015
Patent Application Number
13364727
Date Filed
February 2, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.
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