US Patent 9111840 Semiconductor device and method of fabricating the same
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Patent abstract
Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
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US Patent 09111840 Semiconductor device and method of fabricating the same US Patent 9111840 Semiconductor device and method of fabricating the same
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Patent Number
091118400
Patent Number
91118400
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Patent Jurisdiction
Patent Number
091118400
Date of Patent
August 18, 2015
0Patent Application Number
140530980
Date Filed
October 14, 2013
0Official Website
Patent Primary Examiner
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US Patent 09111840 Semiconductor device and method of fabricating the same
Infobox
Is a
Patent jurisdiction
Patent number
09111840
Date of patent
August 18, 2015
Patent application number
14053098
Date Filed
October 14, 2013
Patent primary examiner
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