Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 18, 2015
Patent Application Number
14160629
Date Filed
January 22, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.
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